N+ buried layer

關於「N+ buried layer」標籤，搜尋引擎有相關的訊息討論：

[PDF] 中文摘要本研究針對橫向絕緣閘雙極性電晶體(LIGBT)在P 型基板(P-type substrate) 與N 型磊晶層(N-type epitaxial layer) 之間隔離漏電流的方法。

... Layer，PBL)與N 型埋層(N-type Buried Layer，NBL) 的.圖片全部顯示Amorphization/recrystallization of buried amorphous silicon layer ...Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion ... edited by S. Mahajan (North-Holland, Amsterdam, 1994), Vol.Correlating the effective work function at buried organic/metal ...... applied after the organic layer is processed, form buried organic/metal ... U. Vogel, E. Lariou, S. C. Hayes, N. Koch and G. L. Frey, J. Mater. Chem.Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-OxideEnhanced dual-gate structure is formed by N-buried layer while avoiding the vertical punch-through breakdown in off-state. Partial P- buried layer with ... tw[PDF] SILICON-ON-INSULATOR TECHNOLOGY: MATERIALS TO VLSIjunction located on a buried oxide layer gives rise to a parasitic ... implanted to control the density of the porous silicon surface layer. The N-.Diagnosis of energy transport in iron buried layer targets using an ...2015年2月9日 · Solid targets with a buried layer of a signature material ... incident upon a buried 50 nm iron layer encased in 39-207 nm parylene-N.US Patent for Semiconductor memory device including work function ...The semiconductor memory device includes a device isolation layer defining active regions of a ... The gate lines GL may be buried in the substrate 100.Ultra-Low Specific On-resistance Lateral Double-Diffused Metal ...2019年1月28日 · In the drift region, the partial P-buried layer with high doping concentration is introduced under the N-drift region to enhance BV while ... tw[PDF] MSMA2ndEdition_august_2012.pdf - Department of Irrigation and ...TW. Tail Water. UDFCD. Urban Drainage and Flood Control District, Denver ... 1.5m above the seasonal high ground water level and/or any impermeable layer.